Wiring structure having integral wiring portion and plug...

Details Wiring structure having integral wiring portion and plug... Wiring structure having integral wiring portion and plug...

2005-09-27

2005-09-27

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257S178000

Reexamination Certificate

active

06949828

ABSTRACT:
In a wiring structure in which a wiring portion and a plug portion each made of a Cu material are formed integrally through a damascene process, the difference between deviation stress applied to the wiring portion in a longitudinal direction and deviation stress applied to the plug portion in a direction perpendicular to the central axis of the plug portion is controlled to be 220 MPa or less.

REFERENCES:
patent: 2002/0011672 (2002-01-01), Oku et al.
patent: 2003/0173671 (2003-09-01), Hironaga et al.
patent: 2004/0198034 (2004-10-01), Chuang
patent: 2001-298084 (2001-10-01), None
Kudo et al., “Copper Dual Damascene Interconnects with Very Low-k Dielectrics Targeting for 130 nm Node,” IEEE, 2000, pp. 270-272.
Kitamura et al., “Numerical Simulation of Stress-Induced Failure in Aluminum Conductors of a Microelectronic Package based on Surface and Grain Boundary Diffusion,” Conference Papers, 1993, pp. 51-56.

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