Wiring structure for semiconductor device

Details Wiring structure for semiconductor device Wiring structure for semiconductor device

2007-01-16

2007-01-16

Potter, Roy Karl (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S761000, C257S764000

Reexamination Certificate

active

10747807

ABSTRACT:
A wiring structure for semiconductor device has a wiring layer that includes copper as main component and a crystal grain promotion layer that promotes enlargement in a crystal grain of the wiring layer.

REFERENCES:
patent: 6322120 (2001-11-01), Carey
patent: 6323120 (2001-11-01), Fujikawa et al.
patent: 6753251 (2004-06-01), Ritzdorf et al.
Kazuhide Abe, et al., “High Reliable Cu Damascene Interconnects with Cu/Ti/Tin/Ti Layered Structure”, Oki Technical Review, No. 184, vol. 67, No. 3, pp. 65-68. Oct. 2000.
Miki Moriyama, et al., “Future Fabrication Techniques for Cu Wires used in Si ULSI Devices”, Material Japan, vol. 39, No. 11, pp. 901-908 (2000).

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