Wiring structure and method of manufacturing the same

Details Wiring structure and method of manufacturing the same Wiring structure and method of manufacturing the same

2008-06-26

2010-12-14

Chu, Chris (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23141, C257S751000, C257S752000, C438S637000

Reexamination Certificate

active

07851917

ABSTRACT:
A wiring structure includes a first wiring, a first interlayer dielectric film having a first opening, a second wiring formed with a first recess portion on a region corresponding to the first opening, a second interlayer dielectric film having a second opening and a third wiring so formed as to cover the second interlayer dielectric film, wherein an inner side surface of the second opening is arranged on a region corresponding to the first recess portion and formed such that an opening width of a portion in the vicinity of an upper end increases from a lower portion toward an upper portion.

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