Wiring material for semiconductor device and method for forming

Details Wiring material for semiconductor device and method for forming Wiring material for semiconductor device and method for forming

1983-12-16

1985-03-05

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29591, 148 15, 148 315, 148 336, 428620, 420537, 357 67, H01L 2128

Patent

active

045022070

ABSTRACT:
A wiring material of a semiconductor device, which comprises aluminum as a major component and at least a surface layer of the wiring layer is alloyed with boron and silicon. A method for forming a wiring material of a semiconductor device, which comprises the steps of: forming a wiring pattern comprising aluminum as a major component on a semiconductor element; and ion-implanting one of boron and a mixture of boron and silicon in the wiring pattern and alloying at least a surface layer of the wiring pattern to form an alloy layer containing aluminum, boron and silicon.

REFERENCES:
patent: 3984619 (1976-10-01), Rau et al.
patent: 4170469 (1979-10-01), Mori
patent: 4213799 (1980-07-01), Raghaven et al.
patent: 4213800 (1980-07-01), Mayo et al.

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