Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2004-10-18
2008-09-02
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S072000, C257S758000, C257S775000, C257S750000, C438S022000, C438S128000
Reexamination Certificate
active
07420211
ABSTRACT:
To provide a technique for manufacturing a wiring line having a low resistance and a high heat resistance so as to make an active matrix type display device larger and finer. The wiring line is constructed of a laminated structure of a refractory metal, a low resistance metal and a refractory metal, and the wiring line is further protected with an anodized film. As a result, it is possible to form the wiring line having the low resistance and the high heat resistance and to form a contact with an upper line easily.
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Ohtani Hisashi
Yamazaki Shunpei
Cook Alex Ltd.
Nguyen Joseph
Parker Kenneth
Semiconductor Energy Laboratory Co,. Ltd.
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