Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
Reexamination Certificate
2006-11-14
2006-11-14
Flynn, Nathan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
With particular signal path connections
C257S202000, C257S205000, C257S274000, C257S338000, C257S390000
Reexamination Certificate
active
07135722
ABSTRACT:
A semiconductor device is the semiconductor device which includes more than one field effect transistor having a gate electrode to which an electrical interconnect wire is connected and a gate insulation film with a thickness of 6.0 nm or less and which comprises a first transistor group made up of a plurality of field effect transistors that are the same in thickness of gate insulation film, a second transistor group made up of a plurality of field effect transistors that are the same in thickness of gate insulation film with the thickness of gate insulation film being less than the thickness of the gate insulation film of the first transistor group, and a semiconductor substrate on which the first and second transistor groups are mounted together in a mixed manner, wherein an antenna ratio which is a ratio of the area of a wire to the gate area of a gate electrode is such that the maximum value of the second transistor group is greater than the maximum value of the first transistor group.
REFERENCES:
patent: 6184083 (2001-02-01), Tsunashima et al.
patent: 2002/0137281 (2002-09-01), Watanabe et al.
patent: 11-8224 (1999-01-01), None
Barry P. Linder, et al. “Calculating Plasma Damage as a Function of Gate Oxide Thickness”; 3RDInternational Symposium on Plasma Process-Induced Damage; Jun. 4-5, 1998; pp. 42-45.
Thomasz Brozek, et al. “Effect of Device Type and Plasma Process on the Oxide Thickness Dependence of Plasma-Induced Charging Damage”; 3RDInternational Symposium on Plasma Process-Induced Damage; Jun. 4-5, 1998; pp. 46-49.
Matsunaga Noriaki
Yamaguchi Hitomi
Flynn Nathan
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tran Tan
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