Wiring forming method

Details Wiring forming method Wiring forming method

1996-02-20

1998-03-03

Nguyen, Nam

Fishing, trapping, and vermin destroying

437247, 437203, 437194, 20419215, 20419217, 2041923, 20419225, 427 97, 427 99, 427117, 427118, 427120, 427123, 427124, H01L 21324, C23C 1434, B05D 512

Patent

active

057233675

ABSTRACT:
A wiring forming method includes a step of forming an oxide film on a silicon substrate, a step of forming a connection hole whose aspect ratio is larger than 1 in the insulation film, a step of forming an Al wiring film on the entire surface by the bias sputtering method and heating the silicon substrate to cause Al wiring film to flow into and fill the connection hole, and a step of processing Al wiring film to form an Al wiring.

REFERENCES:
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patent: 4816126 (1989-03-01), Kamoshida et al.
patent: 4999096 (1991-03-01), Nihei et al.
patent: 5171412 (1992-12-01), Talieh et al.
patent: 5200030 (1993-04-01), Cho et al.
patent: 5266521 (1993-11-01), Lee et al.
patent: 5360524 (1994-11-01), Hendel et al.
patent: 5409862 (1995-04-01), Wada et al.
Smith et al. "The Influence of bias sputtering and wafer preheating on the step coverage of sputtered aluminum" Thin Solid Films, 96 (1982) 291-299 Oct.

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