Wiring connection structure for a semiconductor integrated circu

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257774, H01L 2348, H01L 2944, H01L 2952, H01L 2960

Patent

active

052008070

ABSTRACT:
A wiring connection structure for a semiconductor integrated circuit device interconnects a plurality of wiring layers isolated by an insulating layer, via a through hole defined in the insulating layer. The wiring connection structure comprises a semiconductor substrate, a first insulating layer, a first wiring layer, a second insulating layer and a second wiring layer. The first insulating layer is formed on a main surface of the semiconductor substrate. The first wiring layer is formed on the first insulating layer. The second insulating layer is formed on the first wiring layer. The through hole is formed in the second insulating layer so as to extend to a surface of the first wiring layer. The second wiring layer is formed on the second insulating layer and connected to the first wiring layer via the through hole. The through hole is a single through hole formed in a region where the second wiring layer overlaps with the first wiring layer. The through hole has a cross section comprising a figure formed by indenting peripheries of a single rectangular figure. This cross section has a longer perimeter than the single rectangular figure. Alternatively, the cross section comprises a figure formed by interconnecting band portions extending along the second wiring layer. A reduction is achieved in components of resistance over an entire through hole forming region. Concentration of current density on side walls of the through hole is also mitigated.

REFERENCES:
patent: 3408271 (1968-10-01), Reissmueller et al.
patent: 3436611 (1969-04-01), Perry
patent: 3450964 (1969-06-01), Meer et al.
patent: 3465214 (1969-09-01), Donald
patent: 3518506 (1970-06-01), Gates
patent: 3868723 (1975-02-01), Lechaton et al.
patent: 3902188 (1975-08-01), Jacobson
patent: 4306246 (1981-12-01), Davies et al.
patent: 4688070 (1987-08-01), Shiotari et al.
patent: 4694320 (1987-09-01), Asano
patent: 4734754 (1988-03-01), Nikawa
patent: 4737838 (1988-04-01), Watanabe
patent: 4866502 (1989-09-01), Tomaszewski et al.
patent: 4907039 (1990-03-01), Chikaki
patent: 4908690 (1990-06-01), Hata et al.
patent: 4937652 (1990-06-01), Okumura et al.
patent: 4943841 (1990-07-01), Yahara
patent: 4961104 (1990-10-01), Hirakawa

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Wiring connection structure for a semiconductor integrated circu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wiring connection structure for a semiconductor integrated circu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wiring connection structure for a semiconductor integrated circu will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-540299

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.