Wireless radio frequency power semiconductor devices using high

Details Wireless radio frequency power semiconductor devices using high Wireless radio frequency power semiconductor devices using high

1994-02-07

1997-06-10

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

257691, 257700, 257776, H01L 2334, H01L 23053

Patent

active

056379226

ABSTRACT:
A power device component package includes a substrate supporting a drain lead, a source lead, and a gate lead. Each of the leads comprises an electrically conductive material having a thickness sufficient to form a high current contact. A power device component with component pads has an electrically conductive backside supported by and electrically coupled to the drain lead. A dielectric layer overlies at least portions of the component, the source lead, and the gate lead and has a plurality of vias therein aligned with predetermined ones of the component pads and predetermined portions of the source and gate leads. A pattern of electrical conductors extends through selected ones of the vias, with a first portion of the pattern coupling selected ones of the component pads to the source lead and a second portion of the pattern coupling at least one other of the component pads to the gate lead.

REFERENCES:
patent: 3911553 (1975-10-01), Burgess et al.
patent: 4206469 (1980-06-01), Hanes et al.
patent: 4456888 (1984-06-01), Ayasli
patent: 4783695 (1988-11-01), Eichelberger et al.
patent: 4891686 (1990-01-01), Krausse, III
patent: 4894115 (1990-01-01), Eichelberger et al.
patent: 5206712 (1993-04-01), Kornrumpf et al.
patent: 5331203 (1994-07-01), Wojnarowski et al.
patent: 5336928 (1994-08-01), Neugebauer et al.
patent: 5418394 (1995-05-01), Hertrich

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