Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-06-08
2008-08-26
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S753000
Reexamination Certificate
active
07417316
ABSTRACT:
A wired circuit forming board that can provide improved adhesion between an insulating layer and a conductive pattern and can also prevent delamination in a thin metal layer, a wired circuit board for which the same wired circuit forming board is used, and a thin metal layer forming method for forming the thin metal layer. The thin metal layer2is formed on the insulating base layer1by sputtering the first metal35and the second metal36in such a condition that a first metal diffusing region37for the first metal35to be diffused and a second metal diffusing region38for the second metal36to be diffused are overlapped with each other. This can allow formation of (i) a first unevenly-distributed metal portion4in which the first metal35is unevenly distributed and which is adjacent to the insulating base layer1, (ii) a second unevenly-distributed metal portion5in which the second metal36is unevenly distributed and which is adjacent to the conductive pattern6, and (iii) a metal coexisting portion3which is interposed between the first unevenly-distributed metal portion4and the second unevenly-distributed metal portion5and in which the first metal35and the second metal36are coexistent with each other in such a relation as to be continuously present in the thin metal layer2without defining any boundaries therebetween.
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Naito Toshiki
Yamazaki Hiroshi
Akerman & Senterfitt
Edwards, Esq. Jean C.
Nguyen Cuong Q
Nitto Denko Corporation
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