Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-08-02
2005-08-02
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S762000
Reexamination Certificate
active
06924554
ABSTRACT:
A wirebond structure includes a copper pad formed on or in a surface of a microelectronic die. A conductive layer is included in contact with the copper pad and a bond wire is bonded to the conductive layer. The conductive layer is formed of a material to provide a stable contact between the bond wire and the copper pad in at least one of an oxidizing environment and an environment with temperatures up to at least about 350° C.
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Danielson Donald
Gleixner Robert J.
Naik Rajan
Paluda Patrick M.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Wilson Allan R.
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