Active solid-state devices (e.g. – transistors – solid-state diode – Point contact device
Reexamination Certificate
2006-01-10
2008-09-09
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Point contact device
C257S211000, C257SE21404, C257SE29070, C977S767000, C977S938000
Reexamination Certificate
active
07423285
ABSTRACT:
The difficulty of miniaturization of large-scale integrated circuits in electric devices based on the conventional techniques involving three-dimensional device structures or the introduction of novel materials is solved. Wires2and3are disposed to intersect one another in midair in a matrix. The ends of the wires2and3in midair are designed to be in direct contact with the insides of a package which contains a semiconductor device so that electrical connection and/or physical support can be acquired. Cross point1where wires2and3are in contact with each other is a region which has current switching function similar to the function of a channel of a common MOSFET. Cross point1is a region where base wire2functioning as a substrate and gate electrode wire3functioning as a control electrode (gate electrode) intersect in contact with one another, or a region where base wire2and a lead wire 4 overlap. The diameter and length of the wires as well as the distance therebetween can be designed as desired based on desired device specifications. The semiconductor device is insulated by gas (which is sealed with resin e.g. as the case may be) or vacuum except for an isolation region formed in base wire2.
REFERENCES:
patent: 6559468 (2003-05-01), Kuekes et al.
patent: 2002/0125504 (2002-09-01), Perlov et al.
patent: 2002/0179564 (2002-12-01), Geobegan et al.
patent: 2005/0045919 (2005-03-01), Kaeriyama et al.
patent: 2005/0164583 (2005-07-01), Geobegan et al.
patent: 2005-197612 (2005-07-01), None
patent: 2006-32477 (2006-02-01), None
Sefer A.
Wilson Scott R
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