Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Patent
1996-06-10
1997-09-09
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
257786, 257734, H01L 2348, H01L 2352, H01L 2940
Patent
active
056660090
ABSTRACT:
In a transistor of a structure where a bonding pad formed on the surface of a chip and an end portion of a lead terminal are connected by a bonding wire, by forming the bonding pad to be long and narrow so that its length is parallel to a straight line between the bonding pad and the terminal end. The bonding pad and the terminal end are connected along the shortest line The width of the bonding pad is reduced to a minimum.
REFERENCES:
patent: 3795845 (1974-03-01), Cass et al.
patent: 4403240 (1983-09-01), Seki et al.
patent: 4959706 (1990-09-01), Cusack et al.
patent: 4984061 (1991-01-01), Matsumoto
patent: 5091825 (1992-02-01), Hill et al.
patent: 5126828 (1992-06-01), Hatta et al.
patent: 5173762 (1992-12-01), Ota
patent: 5173763 (1992-12-01), Ota
patent: 5194931 (1993-03-01), Araki
patent: 5329157 (1994-07-01), Rosotker
Higuchi Yasuyuki
Kumano Hiroshi
Clark Jhihan B.
Rohm & Co., Ltd.
Saadat Mahshid D.
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