Wire bonding structure for a semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond

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Details

257786, 257734, H01L 2348, H01L 2352, H01L 2940

Patent

active

056660090

ABSTRACT:
In a transistor of a structure where a bonding pad formed on the surface of a chip and an end portion of a lead terminal are connected by a bonding wire, by forming the bonding pad to be long and narrow so that its length is parallel to a straight line between the bonding pad and the terminal end. The bonding pad and the terminal end are connected along the shortest line The width of the bonding pad is reduced to a minimum.

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