Window VSIS semiconductor laser

Details Window VSIS semiconductor laser Window VSIS semiconductor laser

1985-03-20

1987-08-11

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

046866795

ABSTRACT:
A window VSIS semiconductor laser includes a stimulated region and window regions formed on both ends of the stimulated region. A V-shaped groove is formed in a substrate, and an active layer is formed on the substrate. In one preferred form, the V-shaped groove has a wider width in the stimulated region as compared with the V-shaped groove formed in the window regions. The active layer is a crescent active layer in the stimulated region. One edge of the V-shaped groove in the stimulated region is continuously aligned on a line to the corresponding edge of the V-shaped groove formed in the window regions so as to enhance the optical coupling. In another preferred form, indents are formed in the substrate in the window regions in a manner to sandwich the V-shaped groove formed in the window regions. The V-shaped groove has the same width in the stimulated region and in the window regions. The active layer is plane shaped in the stimulated region, and a thickness of the active layer in the stimulated region is thicker than the active layer formed in the window regions.

REFERENCES:
patent: 4416011 (1983-11-01), Olsen
patent: 4546481 (1985-10-01), Yamamoto et al.
European Search Report, Application Number EP 85 30, 1977.
"Visible GaAlAs V-Channeled Substrate Inner Stripe Laser with Stabilized Mode using p-GaAs Substrate", S.Yamamoto et al, 320 Applied Physics Letters, vol. 40, (1982), Mar. No. 5, pp. 372-374.
"Mode Characteristics of Large-Optical-Cavity V-Channeled Substrate Inner Stripe Injection Lasers", T. Hayakawa, et al, 8106 IEEE Journal of Electronics, vol. QE-19, (1983), Oct. No. 10, pp. 1530-1536.

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