Window structure semiconductor laser

Details Window structure semiconductor laser Window structure semiconductor laser

1983-03-18

1985-10-08

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, 372 45, H01S 319

Patent

active

045464812

ABSTRACT:
A window V-channeled substrate inner stripe semiconductor laser which includes window regions formed at both ends of a stimulated region. The stimulated region includes a crescent active layer, and each of the window regions includes a plane active layer for transferring the laser beam emitted from the stimulated region to the mirror. The window regions ensure a stable operation of the laser oscillation and a high optical power for catastrophic optical damage.

REFERENCES:
Yamamoto et al.; Visible GaA AsV-Channeled Substrate Inner Strip Laser with Stabilized Mode Using p-GaAs Substrate, Dec. 7, 1981, pp. 372-374, Applied Physics Lett. 40(5), Mar. 1, 1982.
Hayakawa et al.; Highly Reliable and Mode Stabilized Operation in V-Channeled Substrate Inner Stripe Lasers on p-GaAs Substrate Emitting in the Visible Wavelength Region, Dec. 1981, pp. 443-446, Report from Int'l Electron Devices Meeting, Washington, D.C.
Hayakawa et al.; Highly Reliable and Mode-Stabilized Operation in V-Channeled Substrate Inner Stripe Lasers on p-GaAs Substrate Emitting in the Visible Wavelength Region; Nov. 1982; pp. 7224-7234, Journal of Applied Physics, vol. 53.

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