Window structure semiconductor laser

Details Window structure semiconductor laser Window structure semiconductor laser

1986-08-26

1988-07-19

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, 357 17, 357 4, H01S 319

Patent

active

047590254

ABSTRACT:
A semiconductor laser includes an active layer 3 of alternately deposited materials I, II defining a quantum well heterostructure, with an elongate window stripe portion being thermally interdiffused by laser irradiation to form a mixed crystal exciting region 8 having a band gap narrower than that of the surrounding layer, which is thus transparent to emitted light.

REFERENCES:
patent: 4309668 (1982-01-01), Ueno et al.
patent: 4511408 (1985-04-01), Holonyak, Jr.
IEEE Journal of Quantum Electronics, vol. QE-15, No. 8, Aug. 1979, pp. 775-781, Yonezu et al., "An AlGaAs Window Structure Laser."

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