Window structure semiconductor laser

Coherent light generators – Particular active media – Semiconductor

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Details

372 48, H07S 319

Patent

active

047303280

ABSTRACT:
A semiconductor laser comprising a substrate; a current blocking layer formed on said substrate; a striped channel formed in said current blocking layer on said substrate, said striped channel being narrow in the vicinity of the facets and being wide inside of the facets; an active layer, a portion of the active layer corresponds to the narrow portion of said striped channel being a plane to form a window region and another portion of the active layer corresponds to the wide portion of said striped channel being a crescent shape to form a laser operation area with a mesa-structure which is surrounded by burying layers to cut off current leakage from said laser operation area, the width of the mesa-portion of said laser operation area being not less than that of a current injection region formed within said striped channel.

REFERENCES:
patent: 4545057 (1985-10-01), Hayakawa et al.

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