Window structure of a semiconductor laser

Details Window structure of a semiconductor laser Window structure of a semiconductor laser

1983-04-20

1985-10-01

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, 372 48, H01S 319

Patent

active

045450579

ABSTRACT:
A window V-channeled substrate inner stripe semiconductor laser includes window regions formed at both ends of a stimulated region. The stimulated region includes a crescent active layer, and each of the window regions includes a plane active layer for transferring the laser beam emitted from the stimulated region to the mirror. An optical guide layer is formed on said crescent and plane active layers in order to ensure a stable operation of the window structure semiconductor laser.

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