Window interface layer of a light-emitting diode

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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Details

C257S013000, C372S042000

Reexamination Certificate

active

11500330

ABSTRACT:
This invention is about a window interface layer in a light-emitting diode which comprises an n-type GaAs substrate with an n-type ohmic electrode at the bottom side thereof; an n-type AlGaInP cladding layer formed atop the substrate; an undoped AlGaInP active layer formed atop the n-type cladding layer; a p-AlGaInP cladding layer formed atop the active layer; a p-type window layer made of GaP; a p-type ohmic electrode formed atop the p-type window layer; and a highly doped p-type interface layer made of GaxIn1-xP (0.6≦x≦0.9) and interposed between the p-type cladding layer and p-type window layer wherein the highly doped p-GaInP interface layer possesses a band gap which is higher than that of the active layer and, however, smaller than that of the p-type cladding layer, and wherein the lattice constant lies between GaAs and GaP. In this way, the p-GaInP interface layer is interposed between a p-GaP window layer and a p-AlGaInP cladding layer for enhancing the film quality and the luminous efficiency as well as improving the electric property.

REFERENCES:
patent: 5045894 (1991-09-01), Migita et al.
patent: 6995401 (2006-02-01), Yamada et al.

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