Window enlargement by selective erase of non-volatile memory...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185020, C365S185240

Reexamination Certificate

active

07898873

ABSTRACT:
A method is described for enlarging a programming window of charge trapping memory cells in a virtual ground charge trapping memory EEPROM array. The method substantially eliminates second bit effects and program disturbances to nearby charge trapping memory cells.

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patent: 6442074 (2002-08-01), Hamilton et al.
patent: 6456531 (2002-09-01), Wang et al.
patent: 6963508 (2005-11-01), Shone
patent: 7486567 (2009-02-01), Wu
patent: 2005/0013173 (2005-01-01), Prinz et al.

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