Wideband schottky focal plane array

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

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357 15, 357 30, H01L 3107, H01L 27144

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active

051226693

ABSTRACT:
A radiation detector includes a silicon substrate (12) having opposing first and second major surfaces, the substrate absorbing visible radiation incident upon the first major surface and passing into the substrate for generating charge carriers therefrom. The detector further includes a silicide layer (16) overlying the second major surface of the substrate, the silicide layer forming a Schottky-barrier junction with the underlying substrate. The silicide layer absorbs IR radiation for generating charge carriers therefrom. The substrate has a resistivity of approximately one thousand ohms per centimeter or greater for enhancing responsivity to visible radiation. A cavity structure (16) overlies the silicide layer and has a reflector (18) optically coupled thereto for reflecting IR radiation that passes through the silicide layer back to the silicide layer. To further enhance responsivity the substrate is thinned and has a thickness within a range of approximately 25 microns to approximately 125 microns.

REFERENCES:
patent: 3071057 (1976-07-01), Connors et al.
patent: 4536658 (1985-08-01), Ludington
W. F. Kosonocky, H. Elabd, H. G. Erhardt, F. V. Shallcross, G. M. Meray, R. Miller, T. S. Villani, J. V. Groppe, V. L. Frantz and F. J. Tams, "Schottky-Barrier Infrared Image Sensors", RCA Engineer, (May-Jun. 1982).
"A Wide Spectral Band Photodetector with PtSi/p-Si Schottky-Barrier" by M. Kimata et al., International Journal of Infrared and Millimeter Waves, vol. 6, No. 10, pp. 1031-1041 (1985).
"PtSi Schottky-Barrier Focal Plane Arrays for Multispectral Imaging in Ultraviolet, Visible, and Infrared Spectral Bands", by B. Tsaur, IEEE Electron Device Lett. (Apr./90).

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