Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1987-02-18
1988-06-21
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330 54, 330286, H03F 360
Patent
active
047527463
ABSTRACT:
A microwave amplifier that both multiplicatively and additively amplifies microwave frequency signals. The amplifier, herein coined a matrix amplifier, is a distributed amplifier with two or more tiers (rows) of transistors. Each tier has a plurality of transistors which additively amplify the signal entering that row of the amplifier, and each row multiplicatively amplifies the output of the previous row. The gates of the transistors in each row are sequentially coupled to an input transmission line having a series of transmission elements. The outputs of all the transistors from each row are sequentially coupled to the input transmission line of the next tier, except that the outputs of the last tier are coupled to an output transmission line for transmitting the output of the amplifier to an output node. Furthermore, each transmission lines has (1) at least one line termination at one of its ends for absorbing signals incident on that end of the transmission line, and (2) biasing means for d.c. biasing the transmission line at a corresponding voltage potential.
REFERENCES:
patent: 4291286 (1981-09-01), Wagner
Ten et al, "A Wide-Band Transistor Amplifier of Nanosecond Pulses", Instruments and Experimental Techniques, vol. 17, No. 6, Pt. 2, May 1975, pp. 1650-1693.
Mullins James B.
Watkins-Johnson Company
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