Wideband MESFET microwave frequency divider

Details Wideband MESFET microwave frequency divider Wideband MESFET microwave frequency divider

1980-06-10

1982-04-27

Gensler, Paul L.

Wave transmission lines and networks

Frequency multipliers

307225C, H01P 120, H03H 1104

Patent

active

043273432

ABSTRACT:
A frequency divider is known which uses varactor diodes in a circuit which resonates at f.sub.o /N where N is an even integer. Because of circuit losses within the varactor diodes, amplifiers are generally required to recover the input signal level. For systems that require cascaded frequency dividers at least one amplifier is required for each frequency divider. The present invention overcomes these problems by providing a microwave frequency divider to perform parametric frequency division and amplification simultaneously at microwave frequencies. A signal f.sub.o is applied to an input transmission line which forms, with the inherent frequency dependent non-linear gate-to-source capacitance of at least one MESFET, a circuit resonant at f.sub.o /N, wherein N is an even integer such as 2. The source-drain path of the MESFET is coupled via an output transmission line to a balun transformer having an output to provide amplified signals at f.sub.o /N. The transmission lines may be microstrip, stripline or other suitable type of transmission line.

REFERENCES:
patent: 3921056 (1975-11-01), Mahoney
patent: 4152680 (1979-05-01), Harrison
patent: 4176332 (1979-11-01), Backert
Beneking et al. Procedure for the Measurement of s-parameters, etc., Proc. of 3rd Biennial Cornell E.E. Conference., Ithaca, NY Aug. 71 pp. 427-436._
Wolf, Microwave Properties of Schottky--barrier Field--effect Transistors, IBM J. Res. Develop.; Mar. 1970.

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