Amplifiers – With semiconductor amplifying device – Including push-pull amplifier
Patent
1999-01-25
2000-08-22
Pascal, Robert
Amplifiers
With semiconductor amplifying device
Including push-pull amplifier
330311, H03F 326
Patent
active
061078859
ABSTRACT:
The present invention incorporates GaAs field effect transistors (GaAsFETs) in a radio frequency (RF) ultra-linear amplifier. The described amplifier circuit is a transformer-coupled single input, signal processing unit incorporating ultra-fast, GaAsFETs in a three active device cascode. This arrangement allows for a higher working voltage to be applied across the three semiconductors rather than a traditional two transistor cascode. The operational bandwidth can process a mixed modulation signal comprised of analog and digital channels.
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Fenney, RF Linear Hybrid Amplifiers, Two Sources Of A New Family Of Medium Power Broadband Gain Blocks For RF Applications, Motorola RF Device Data, pp. 204-207 (Undated Prior Art).
McNamara et al., 750 MHz Power Doubler And Push-Pull CATV Hybrid Modules Using Gallium Arsenide, California Eastern Laboratories, Automated Fax Information, 8 pages, (Dated 1996).
McNamara, Cable '96: Push-Pull and Power Doubler Amplifiers Using Gallium Arsenide, California Eastern Labs, Automated Fax Information, 4 pages, (Dated 1996).
Miguelez et al., The Advantages of Gallium Arsenide Hybrid Power Amplifier Technology In Cable Television Applications, 13 pages, (Dated Jan. 27, 1998).
Menna Rudolph J.
Miguelez Philip
Choe Henry
General Instrument Corporation
Pascal Robert
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