Wideband IF amplifier with complementary GaAs FET-bipolar transi

Details Wideband IF amplifier with complementary GaAs FET-bipolar transi Wideband IF amplifier with complementary GaAs FET-bipolar transi

1983-01-05

1984-08-07

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including combined diverse-type semiconductor device

330304, 330306, 358188, 455190, 455253, 455340, H03F 316

Patent

active

044646364

ABSTRACT:
A wideband intermediate frequency (IF) amplifier including a GaAs FET input portion and a bipolar transistor output portion is disclosed. The high gain of the GaAs FET over higher frequencies is complemented by the high gain of the bipolar transistors at lower frequencies to provide high amplifier gain over a large bandwidth. The GaAs FET and bipolar portions are coupled by means of an equalizer circuit matching the two portions together only at the higher frequencies of the IF band to provide an inexpensive, high performance IF amplifier particularly adapted for use in a direct broadcast satellite receiver operating in the super high frequency (SHF) band.

REFERENCES:
patent: 4277757 (1981-07-01), Kennedy
Hastings, M. V., "Testbench Amplifier", Radio and Elec. Constructor, vol. 32, No. 8, Apr. 1979, pp. 470-474.

Affiliated with

Also associated with

Rating

Wideband IF amplifier with complementary GaAs FET-bipolar transi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wideband IF amplifier with complementary GaAs FET-bipolar transi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wideband IF amplifier with complementary GaAs FET-bipolar transi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-605180