Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-09-06
2005-09-06
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S024000, C257S197000
Reexamination Certificate
active
06940090
ABSTRACT:
A power semiconductor device includes a first semiconductor layer, a second semiconductor layer of a first conductivity type, first and second main electrodes, a control electrode and a third semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer. The first and second main electrodes are formed on the second semiconductor layer separately from each other. The control electrode is formed on the second semiconductor layer between the first and second main electrodes. The third semiconductor layer is formed on the second semiconductor layer between the control electrode and the second main electrode.
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Ohashi Hiromichi
Omura Ichiro
Saito Wataru
Kabushiki Kaisha Toshiba
Lewis Monica
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Wilczewski Mary
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