Wideband CMOS gain stage

Details Wideband CMOS gain stage Wideband CMOS gain stage

2005-08-09

2005-08-09

Wille, Douglas (Department: 2814)

Amplifiers

With semiconductor amplifying device

Including differential amplifier

Reexamination Certificate

active

06927631

ABSTRACT:
A CMOS gain stage includes biasing circuitry configured to insure saturation of a subsequent stage without a source follower circuit. The CMOS gain stage is optionally powered by a supply voltage that is greater than a permitted supply voltage for a processes technology that is used to fabricate the CMOS gain stage. In order to protect CMOS devices within the CMOS gain stage, optional drain-to-bulk junction punch-through protection circuitry is disclosed. A variety of optional features can be implemented alone and/or in various combinations of one another. Optional features include process-voltage-temperature (“PVT”) variation protection circuitry, which renders a gain relatively independent of process, voltage, and/or temperature variations. Optional features further include bandwidth enhancement circuitry.

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Hara, Shinji et al., “Broad-Band Monolithic Microwave Active Inductor and its Application to Miniaturized Wide-Band Amplifiers,” IEEE Transactions on Microwave Theory and Techniques, vol. 36, No. 12, Dec. 1988, pp. 1920-1924.
Greshishchev, Yuriy M. and Schvan, Peter, “A 60dB Gain 55dB Dynamic Range 10Gb/s Broadband SiGe HBT Limiting Amplifer,” 1999 IEEE International Solid-State Circuits Conference, pp. 382-383.
Masuda, Toru et al., “Transimpedance 32dB Limiting Amplifer and 40Gb/s 1:4 High-Sensitivity Demultiplexer with Decision circuit using SiGe HBTs for 40GB/s Optical Receiver,” 2000 IEEE International Solid-State Circuits Conference, p. 60.
European Search Report from European Application No. 03019211.6, filed Aug. 25, 2003, 3 pages, Search Report published Jun. 4, 2004.

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