Amplifiers – With semiconductor amplifying device – Including frequency-responsive means in the signal...
Reexamination Certificate
2008-05-13
2008-05-13
Nguyen, Khanh Van (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including frequency-responsive means in the signal...
C330S310000
Reexamination Certificate
active
11256118
ABSTRACT:
Embodiments of the present invention include circuits and methods with wide bandwidths. In one embodiment, parasitic capacitances of the output of a first stage and the input of a second stage are included in a network. The output of the first stage is coupled to the input of the network, and the input of the second stage is coupled to an intermediate node of the network. In one embodiment, the parasitic capacitance of the second stage is the largest capacitance in the network.
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Thomas H. Lee, “The Design of CMOS Radio-Frequency Integrated Circuits”, Published 1998, pp. 270-313, Cambridge University Press.
Bagheri Rahim
Djafari Masoud
Komijani Abbas
Rostami Edris
Fountainhead Law Group P.C.
Nguyen Khanh Van
Walsh Chad R.
WiLinx, Inc.
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