Wideband anti-reflection coating for indium antimonide photodete

Details Wideband anti-reflection coating for indium antimonide photodete Wideband anti-reflection coating for indium antimonide photodete

1992-08-21

1993-11-16

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

257437, 359588, 250216, 250226, H01J 4014

Patent

active

052626334

ABSTRACT:
A four-layer, wideband anti-reflection coating (30) is formed on a light-receiving surface (22) of an indium antimonide (InSb) photodetector (10) to enable detection of light at visible as well as infrared wavelengths. The layers (30a,30b,30c,30d) each have an optical thickness of approximately one-quarter wavelength at a reference wavelength of 1.6 microns. The refractive indices of the layers (30a,30b,30c,30d) are stepped down from the surface (22), having values of approximately 3.2/2.6/1.9/1.45 respectively. The second layer (30b) is preferably formed of silicon suboxide (SiO.sub.0<X<1) by electron-beam deposition of silicon in an oxygen backfill to obtain a refractive index between the indices of silicon and silicon monoxide. A thin passivation layer (26) of germanium or silicon nitride is formed on the surface (22) under the anti-reflection coating (30) to inhibit a flashing effect at infrared wavelengths after exposing to the ultraviolet (UV) and/or visible light.

REFERENCES:
patent: 3463574 (1969-08-01), Bastein et al.
patent: 3854796 (1974-12-01), Thelen
patent: 4528418 (1985-07-01), McGill

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