Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1996-12-20
1998-12-01
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257461, H01L 31107, H01L 3106
Patent
active
058442910
ABSTRACT:
A novel use of a solid state light detector with a low impedance substrate is described. Light that enters the substrate after traversing the antireflective layer creates an electron-hole pair. The electrons are collected in a crystalline epitaxial layer that spans the space charge region, or depletion layer. A high electric field accelerates free electrons inside the depletion region. The electrons collide with the lattice to free more holes and electrons resulting from the presence of a n-p junction, or diode. The diode is formed by placing the crystalline layer which has positive doping in close proximity with the electrodes which have negative doping. The continual generation of charge carriers results in avalanche multiplication with a large multiplication coefficient. During the avalanche process, electrons can be collected enabling light detection. A resistive layer is used to quench, or stop, the avalanche process.
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Antich Peter P.
Tsyganov Edward N.
Board of Regents , The University of Texas System
Meier Stephen
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