Wide spectral range hybrid image detector

Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive

Reexamination Certificate

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Reexamination Certificate

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08058615

ABSTRACT:
An apparatus for detecting radiation of a plurality of wavelengths of the electromagnetic spectrum may be provided. The apparatus includes a substrate, a laser irradiated layer proximal to a first side of the substrate, and a microbolometer and at least one readout circuit proximal to a second side of the substrate in electrical communication with the laser irradiated layer. The substrate, laser irradiated layer, and the microbolometer are disposed and arranged such that radiation of a first wavelength is substantially detected by the laser irradiated layer, and radiation of a second wavelength is substantially detected by the microbolometer.

REFERENCES:
patent: 4201450 (1980-05-01), Trapani
patent: 4242149 (1980-12-01), King et al.
patent: 4277793 (1981-07-01), Webb
patent: 4965784 (1990-10-01), Land et al.
patent: 5234790 (1993-08-01), Lang et al.
patent: 5346850 (1994-09-01), Kaschmitter et al.
patent: 5640013 (1997-06-01), Ishikawa et al.
patent: 5773820 (1998-06-01), Osajda et al.
patent: 5977603 (1999-11-01), Ishikawa
patent: 6080988 (2000-06-01), Ishizuya et al.
patent: 6097031 (2000-08-01), Cole
patent: 6420706 (2002-07-01), Lurie et al.
patent: 6465860 (2002-10-01), Shigenaka et al.
patent: 6475839 (2002-11-01), Zhang et al.
patent: 6683326 (2004-01-01), Iguchi et al.
patent: 6790701 (2004-09-01), Shigenaka et al.
patent: 6800541 (2004-10-01), Okumura
patent: 6825057 (2004-11-01), Heyers et al.
patent: 6927432 (2005-08-01), Holm et al.
patent: 6984816 (2006-01-01), Holm et al.
patent: 7057256 (2006-06-01), Carey, III et al.
patent: 7256102 (2007-08-01), Nakata et al.
patent: 7354792 (2008-04-01), Carey, III et al.
patent: 7390689 (2008-06-01), Mazur et al.
patent: 7442629 (2008-10-01), Mazur et al.
patent: 7629582 (2009-12-01), Hoffman et al.
patent: 2002/0056845 (2002-05-01), Iguchi et al.
patent: 2002/0148964 (2002-10-01), Dausch et al.
patent: 2003/0029495 (2003-02-01), Mazur et al.
patent: 2006/0006482 (2006-01-01), Rieve et al.
patent: 2006/0132633 (2006-06-01), Nam et al.
patent: 2006/0145148 (2006-07-01), Hirai et al.
patent: 2006/0145176 (2006-07-01), Lee
patent: 2006/0181627 (2006-08-01), Farrier
patent: 2006/0231914 (2006-10-01), Carey, III et al.
patent: 2006/0244090 (2006-11-01), Roy et al.
patent: 2007/0178672 (2007-08-01), Tanaka et al.
patent: 2008/0258604 (2008-10-01), Mazur et al.
patent: 0566156 (1993-10-01), None
patent: 1794804 (2007-06-01), None
patent: 2030766 (1980-04-01), None
patent: 57173966 (1982-10-01), None
patent: 04318970 (1992-11-01), None
patent: 2003163360 (2003-06-01), None
patent: 2007-180643 (2007-07-01), None
patent: WO 2006086014 (2006-08-01), None
patent: 2008091242 (2008-07-01), None
Li, “Design and Simulation of an Uncooled Double-Cantilever Microbolometer with the Potential for ˜mK NETD,” 2004, Sensors and Actuators A, 351-359, vol. 112, Elsevier B.V.
Moloney, A. M., et al, “Novel Black Silicon PIN Photodiodes,” Semiconductor Photodetectors III, Proceedings of the SPIE, 2006, vol. 6119, 61190B-1-61190B-8, Bellingham, Washington.
Oden, P.I. et al, “Optical and Infrared Detection Using Microcantilevers,” Infrared Technology and Applications XXII, Proceedings of the SPIE, 1996, vol. 2744, 345-254, Orlando, Florida.
Wu, et al, “Near-Unity Below-Band-Gap Absorption by Microstructured Silicon,” 2001, Applied Physics Letters, 1850-1852, vol. 78, No. 13, American Institute of Physics.
Xu, Y., et al, “Infrared Detection Using Thermally Isolated Diode,” Sensors and Actuators A, Elsevier Sequoia S.A., 1993, vol. 36, 209-217, Lausanne, Switzerland.
Chien et al, “Pulse Width Effect in Ultrafast Laser Processing of Materials,” Applied Physics A, 2005, 1257-1263, 81, Springer Berlin, Heidelberg, Germany.
Nayak et al, “Semiconductor Laesr Crystallization of a-Si:H,” SPIE Digital Library, 2003, 277-380, vol. 4977, Bellingham, Washington.
Nayak et al, “Semiconductor Laser Crystallization of a-Si:H on Conducting Tin-Oxide-Coated Glass for Solar Cell and Display Applications,” Applied Physics A, 2005, 1077-1080, 80, Springer Berlin, Heidelberg, Germany.
Nayak et al, “Ultrafast-Laser-Assisted Chemical Restructuring of Silicon and Germanium Surfaces,” Applied Surface Science, 2007, 6580-6583, vol. 253, Issue 15, Elsevier B.V.
Nayak et al, “Ultrafast Laser Textured Silicon Solar Cells,” Mater. Res. Soc. Symp. Proc., 2009, vol. 1123, Materials Research Society.
Zhang et al, “Ultra-Shallow P+-Junction Formation in Silicon by Excimer Laser Doping: a Heat and Mass Transfer Perspective,” Int. J. Heat Mass Transfer, 1996, 3835-3844, vol. 39, No. 18, Elsevier Science Ltd., Great Britain.
Bogue, “From Bolometers to Beetles: The Development of Thermal Imaging Sensors,” Sensor Review (2007), vol. 27, No. 4, 278-281, Emerald Group Publishing Limited, Bingley, United Kingdom.
Carey, et al., “Fabrication of Micrometer-Sized Conical Field Emitters Using Femtosecond Laser-Assisted Etching of Silicon,” Proc. IVMC 2001, 75-76, UC Davis, Davis, CA.
Carey, et al., “Field Emission from Silicon. Microstructures Formed by Femtosecond Laser Assisted Etching,” Proc. CLEO 2001 (Baltimore, MD 2001) 555-557.
Carey, et al. “Femtosecond Laser-Assisted Microstructuring of Silicon for Novel Detector, Sensing and Display Technologies”, LEOS 2002, 97-98, Glasgow, Scotland.
Carey, et al., “High Sensitivity Silicon-Based VIS/NIR Photodetectors”, Optical Society of America (2003) 1-2.
Carey, et al. “Femtosecond Laser-Assisted Microstructuring of Silicon for Novel Detector, Sensing and Display Technologies”, LEOS 2003, 481-482, Tuscon, AR.
Carey et al., “Femtosecond-Laser-Assisted Microstructuring of Silicon Surfaces”, Optics and Photonics News, 2003. 14, 32-36.
Crouch et al., “Infrared Absorption by Sulfur-Doped Silicon Formed by Femtosecond Laser Irradiation”, Appl. Phys. A, 2004, 79, 1635-1641.
Crouch et al., “Comparison of Structure and Properties of Femtosecond and Nanosecond Laser-Structured Silicon” Appl. Phys. Lett., 2004, 84,1850-1852.
Dolgaev et al., “Formation of Conical Microstructures Upon Laser Evaporation of Solids”, Appl. Phys. A, 2001, 73, 177-181.
Fowlkes et al., “Surface Microstructuring and Long-Range Ordering of Silicon Nanoparticles”, Appl. Phys. Lett., 2002, 80 (20), 3799-3801.
Her et al., “Novel Conical Microstructures Created in Silicon With Femtosecond Laser Pulses”, CLEO 1998, 511-512, San Francisco, CA.
Her et al., “Microstructuring of Silicon with Femtosecond Laser Pulses,” Applied Physics Letters, 1998, 1673-1675, vol. 73, No. 12, American Institute of Physics.
Her, et al., “Femtosecond laser-induced formation of spikes on silicon,” Applied Physics A, 2000, 70, 383-385.
Hu et al., “Solar Cells from Basic to Advanced Systems,” McGraw Hill Book Co., 1983, 39, New York, New York.
Pedraza et al., “Surface Nanostructuring of Silicon”, Appl. Phys. A, 2003, 77, 277-284.
Pedraza et al., “Silicon Microcolumn Arrays Grown by Nanosecond Pulsed-Excimer Laser Irradiation”, Appl. Phys. Lett., 1999, 74 (16), 2322-2324, American Institute of Physics.
Sanchez et al., “Dynamics of the Hydrodynamical Growth of Columns on Silicon Exposed to ArF Excimer-Laser Irradiation”, Appl. Phys. A, 1998, 66, 83-86.
Sanchez et al., “Whiskerlike Structure Growth on Silicon Exposed to ArF Excimer Laser Irradiation”, Appl. Phys. Lett., 1996, 69 (5), 620-622.
Serpenguzel et al., “Temperature Dependence of Photluminescence in Non-Crystalline Silicon”, Photonics West (San Jose, CA, 2004) 454-462.
Shen et al., “Formation of Regular Arrays of Silicon Micorspikes by Femotsecond Laser Irradiation Through A Mask”, Appl. Phys. Lett., 82, 1715-1717 (2003).
Solar Energy Research Institute, “Basic Photovoltaic Principles and Methods,” Van Nos

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