Wide range radiation detector and manufacturing method

Details Wide range radiation detector and manufacturing method Wide range radiation detector and manufacturing method

2006-06-16

2011-10-25

Kim, Jay C (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S184000, C257S200000, C257S428000, C257S431000, C257S436000, C257S461000, C257S614000, C257SE27122, C257SE27140, C257SE27146, C257SE31005, C257SE31015, C257SE31018, C257SE31086, C257SE31092

Reexamination Certificate

active

08044476

ABSTRACT:
A radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different from the first energy provided on the IV semiconductor layer.

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