Wide dynamic range transconductance stage

Details Wide dynamic range transconductance stage Wide dynamic range transconductance stage

1990-10-15

1992-03-31

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307570, 307495, 307355, 307360, 307362, 330300, 330252, 330253, H03K 19007, H03K 19094

Patent

active

051011263

ABSTRACT:
A wide dynamic range transconductance stage has two branches, each branch being composed of a plurality of transconductance circuit paths. Each circuit path has a greater transconductance than the other circuit paths for its branch within a respective sub-range of the input signal range for the stage as a whole, with each path dominating the other paths for its branch within its respective sub-range. The overall bandwidth for the stage, its g.sub.m, its noise characteristics and its input voltage range are enhanced as a result. Bandwidth and slew rate may be independently optimized by the designer. Two paths are used for each branch in the preferred embodiment, with one path consisting of a bipolar transistor and the other path either a field effect transistor or a resistor degenerated bipolar transistor. Multiple paths may be used based on the same principle.

REFERENCES:
patent: 4785259 (1988-11-01), Seelbach et al.
patent: 4902984 (1990-02-01), Vinn et al.
patent: 4904952 (1990-02-01), Tanimoto

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