Wide dynamic range sensor having a pinned diode with...

Television – Camera – system and detail – Solid-state image sensor

Reexamination Certificate

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Details

C348S294000, C348S296000, C257S292000

Reexamination Certificate

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08077238

ABSTRACT:
A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional exemplary embodiments also employ an anti-blooming transistor in conjunction with the dual pinned photosensor. Other exemplary embodiments provide a pixel with two pinned voltage regions and two anti-blooming transistors. Methods of fabricating the exemplary pixel cells are also disclosed.

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