Wide dynamic range RF mixers using wide bandgap semiconductors

Details Wide dynamic range RF mixers using wide bandgap semiconductors Wide dynamic range RF mixers using wide bandgap semiconductors

1997-02-21

2000-08-29

Le, Dinh

Miscellaneous active electrical nonlinear devices, circuits, and

Specific input to output function

Combining of plural signals

327113, 327116, 327356, 455326, 455330, H04B 126

Patent

active

061114529

ABSTRACT:
A wide dynamic range RF mixer is shown using wide bandgap semiconductors such as SiC, GaN, AlGaN, or Diamond instead of conventional narrow bandgap semiconductors. The use of wide bandgap semiconductors will permit RF mixers to operate in higher RF environments, to be less susceptible to out-of-band jamming and interference, and to be more effective in receiving weak RF signals in the presence of strong unwanted signals. RF receivers can be more closely collocated to transmitters and still receive weak signals without suffering intermodulation distortion products

REFERENCES:
patent: 4513250 (1985-04-01), Harman
patent: 4896374 (1990-01-01), Waugh et al.
patent: 5406237 (1995-04-01), Ravas et al.
patent: 5559358 (1996-09-01), Burns et al.
patent: 5670788 (1997-09-01), Geis
Bhatnagar and Baliga, Comparison of 6H-SiC, 3C-SiC, and Si for Power Devi, Mar. 3, 1993.

Affiliated with

Also associated with

Rating

Wide dynamic range RF mixers using wide bandgap semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wide dynamic range RF mixers using wide bandgap semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wide dynamic range RF mixers using wide bandgap semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1253822