Wide bandgap transistor devices with field plates

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Reexamination Certificate

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C257SE29246

Reexamination Certificate

active

07928475

ABSTRACT:
A transistor structure comprising an active semiconductor layer with metal source and drain contacts formed in electrical contact with the active layer. A gate contact is formed between the source and drain contacts for modulating electric fields within the active layer. A spacer layer is formed above the active layer and a conductive field plate formed above the spacer layer, extending a distance Lffrom the edge of the gate contact toward the drain contact. The field plate is electrically connected to the gate contact and provides a reduction in the peak operational electric field.

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Wataru Saito (IEE

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