Wide bandgap semiconductor light emitters

Details Wide bandgap semiconductor light emitters Wide bandgap semiconductor light emitters

1993-11-16

1994-12-06

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257191, 257201, H01L 2300, H01L 2978

Patent

active

053714091

ABSTRACT:
Type-II semiconductor heterojunction light emitting devices formed on a substrate are described wherein a graded injection layer is used to accelerate electrons over the electron barrier formed by the junction. Further, wide band gap semiconductor LEDs and lasers are proposed formed of II-VI materials which emit light in the blue and green wavelengths. Particularly, a system composed of n-CdSe:Al/Mg.sub.x Cd.sub.1-x Se/Mg.sub.y Zn.sub.1-y Te/p-ZnTe are described where the value of y determines the wavelength of the emitted light in the green or blue region and x varies across the graded injection layer for raising the energy levels of excited electrons.

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