Wide bandgap semiconductor device construction

Details Wide bandgap semiconductor device construction Wide bandgap semiconductor device construction

2007-07-10

2007-07-10

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S017000, C438S750000

Reexamination Certificate

active

10630238

ABSTRACT:
The invention includes methods for precisely and accurately etching layers of wide bandgap semiconductor material. According to one aspect of the invention, the method includes providing a multi-layer laminate including at least a first and second layer of wide bandgap semiconductor material, measuring a first conductance of the first layer of semiconductor material, partially etching the first layer of semiconductor material a first amount, measuring a second conductance of the first layer of semiconductor material etched the first amount, and utilizing the first and second measured conductance to determine a time required to etch the first layer of semiconductor material a second amount.

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