Wide bandgap HEMTs with source connected field plates

Details Wide bandgap HEMTs with source connected field plates Wide bandgap HEMTs with source connected field plates

2004-10-04

2009-06-23

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000, C257SE29246, C257SE29249, C438S172000

Reexamination Certificate

active

07550783

ABSTRACT:
A HEMT comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the plurality of active layers. A spacer layer is formed on at least a portion of a surface of said plurality of active layers and covering the gate. A field plate is formed on the spacer layer and electrically connected to the source electrode, wherein the field plate reduces the peak operating electric field in the HEMT.

REFERENCES:
patent: 4551905 (1985-11-01), Chao et al.
patent: 4947232 (1990-08-01), Ashida et al.
patent: 5192987 (1993-03-01), Khan et al.
patent: 5196359 (1993-03-01), Shih et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5399886 (1995-03-01), Hasegawa
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5569937 (1996-10-01), Bhatnagar
patent: 5652179 (1997-07-01), Strifler et al.
patent: 5885860 (1999-03-01), Weitzel et al.
patent: 5929467 (1999-07-01), Kawai et al.
patent: 6033948 (2000-03-01), Kwon et al.
patent: 6057564 (2000-05-01), Rennie
patent: 6100571 (2000-08-01), Mizuta et al.
patent: 6127703 (2000-10-01), Letavic et al.
patent: 6140169 (2000-10-01), Kawai et al.
patent: 6307232 (2001-10-01), Akiyama et al.
patent: 6346451 (2002-02-01), Simpson et al.
patent: 6445038 (2002-09-01), Tihanyi
patent: 6468878 (2002-10-01), Petruzzello et al.
patent: 6475857 (2002-11-01), Kim et al.
patent: 6483135 (2002-11-01), Mizuta et al.
patent: 6486502 (2002-11-01), Sheppard et al.
patent: 6495409 (2002-12-01), Manfra et al.
patent: 6559513 (2003-05-01), Miller et al.
patent: 6586781 (2003-07-01), Wu et al.
patent: 6586813 (2003-07-01), Nagahara
patent: 6624488 (2003-09-01), Kim
patent: 6686616 (2004-02-01), Allen et al.
patent: 6690042 (2004-02-01), Khan et al.
patent: 6933544 (2005-08-01), Saito et al.
patent: 6940090 (2005-09-01), Saito et al.
patent: 2001/0015446 (2001-08-01), Inoue et al.
patent: 2001/0023964 (2001-09-01), Wu et al.
patent: 2002/0005528 (2002-01-01), Nagahara
patent: 2002/0017648 (2002-02-01), Kasahara et al.
patent: 2002/0137318 (2002-09-01), Peake et al.
patent: 2002/0155646 (2002-10-01), Petruzzello et al.
patent: 2003/0006437 (2003-01-01), Mizuta et al.
patent: 2003/0107081 (2003-06-01), Lee et al.
patent: 2003/0183844 (2003-10-01), Yokoyama et al.
patent: 2003/0222327 (2003-12-01), Yamaguchi et al.
patent: 2004/0188775 (2004-09-01), Peake et al.
patent: 2005/0051796 (2005-03-01), Parikh et al.
patent: 2005/0062069 (2005-03-01), Saito et al.
patent: 2005/0082611 (2005-04-01), Peake et al.
patent: 2005/0110042 (2005-05-01), Saito et al.
patent: 2005/0189559 (2005-09-01), Saito et al.
patent: 2006/0011915 (2006-01-01), Saito et al.
patent: 2006/0071247 (2006-04-01), Chen et al.
patent: 1639875 (2005-07-01), None
patent: 0069429 (1983-01-01), None
patent: 0792028 (1997-08-01), None
patent: 1336989 (2003-08-01), None
patent: 05021793 (1993-01-01), None
patent: 07176544 (1995-07-01), None
patent: WO9908323 (1999-02-01), None
patent: WO03038905 (2003-05-01), None
patent: PCT/JP03/00843 (2004-08-01), None
patent: WO2004068590 (2004-08-01), None
patent: WO2004068590 (2004-08-01), None
patent: WO2005114743 (2005-12-01), None
patent: WO2006025971 (2006-03-01), None
W. Saito. et al. “High Breakdown Voltage AIGaN-GaN Power-HEMT Design and High Current Desnity Switching Behavior.” IEEE Transactions On Electronic Devices, vol. 50, No. 12 (Dec. 2003) p. 2528-2531.
CRC Press,The Electrical Engineering Handbook, Second Edition, DORF, (1997) p. 994.
B. Gelmont, K. Kim, and M. Shur. “Monte Carlo Simulation of Electron Transport in Gallium Nitrate.”Journal of Applied Physics, vol. 74, Issue 3, (Aug. 1, 1993) p. 1818.
R. Gaska, J.W. Yang, A. Osinsky, Q. Chen, M.A. Khan, A.O. Orlov, G.L. Snider, M.S. Shur. “Electron Transport in ALGaN Heterostructures Grown on 6H-SiC Substrates.”Applied Physics Letters, vol. 72, No. 6 (Feb. 9, 1998) p. 707.
Y. F. Wu et. al. “GaN-Based FETs for Microwave Power Amplification.”IEICE Transactions on Electronics, E-82-C, (1999) p. 1895.
Y.F. Wu, D. Kapolnek, J.P. Ibettson, P. Parikh, B.P. Keller, and U.K. Mishra. “Very-High Power Density ALGaN/GaN HEMTS.”IEEE Transactions on Electronic Devices, vol. 48, Issue 3 (Mar. 2001) p. 586.
M. Micovic, A. Kurdoghlian, P. Janke, P. Hashimoto, D.W.S. Wong, J. S. Moon, L. McRay, and C. Nguyen. “ALGaN/GaN Heterojunction Field Effect Transistors Grown by Nitrogen Plasma Assisted Molecular Beam Epitaxy.”IEEE Transactions on Electronic Devices, vol. 48, Issue 3, (Mar. 2001) p. 591.
Gaska et al., “Hightemperature Perofrmance of ALGAN/GaN HFET's on SiC Substrates.”IEEE Electron Device Lettersvol. 18, No. 10, (Oct. 1997) p. 492.
Ping et al., “DC and Microwave Performance of High Current ALGaN Heterostructure Field Effect Transistors Grown on P-Type SiC Substrates.”IEEE Electron Device Lettersvol. 19, No. 2, (Feb. 1998) p. 54.
L. Eastman, K. Chu, J. Smart, J. R. Shealy, “GaN Materials for High Power Microwave Amplifiers.”Materials Research Societyvol. 512 WOCSEMMAD, Monterey, CA (Feb. 1998) p. 3-7.
G. Sullivan et al., “High Power 10-GHz Operation of ALGaN HFET's in Insulating SiC.”IEEE Electron Device Lettersvol. 19, No. 6, (Jun. 1998) p. 198.
Wu et al., “High Al-Content ALGaN/GaN MODFETs for Ultrhigh Performance.”IEEE Electron Device Lettersvol. 19, No. 2, (Feb. 1998) p. 50.
Y. Ando, et al., “10-W/mm ALGaN-GaN HFET With a Field Modulating Plate.”IEEE Electron Device Lettersvol. 24, No. 5, (May 2003) p. 289-292.
S. Karmalkar, U.K. Mishra, “Very High Voltage ALGaN/GaN High Electron Mobility Transistors Using A Field Plate Deposited on a Stepped Insulator.”Solid-State Electronicsvol. 45, (2001) pp. 1645-1652.
W. Saito et al., “600V ALGaN/GaN Power-HEMT: Design, Fabrication and Demonstration on High Voltage DC-DC Converter.”IEEE IEDMvol. 23, No. 7, (2003) pp. 587-590.
Wu et al., “High-Gain Microwave GAM HEMTS With Source-Terminated Field-Plates”, Cree Santa Barbara Technology Center.
Wu et al., “30-W/MM GAN HEMTS by Field Plate Optimization”, IEEE, vol. 25, No. 3, Mar. 2004, p. 117-119.
Asano K et al: “Novel High Power AlGaAs/GaAs HFET With a Field-Modulating Plate Operated at 35 V Drain Voltage”, Electron Devices Meeting, 1998. IDM '98 Technical Digest. International San Francisco, CA USA Dec. 6-9, 1998, Piscataway, NJ, USA IEEE US, Dec. 6, 1998, pp. 59-62 XP010321500.
Wakejima A et al, “High Power Density and Low Distortion INGAP Channel FETS With Field-Modulating Plate”, IEICE Transactions on Electronics, Institute of Electronics Information and Comm. Eng. Tokyo, JP, vol. E85-C, No. 12, Dec. 2002, pp. 2041-2045, XP001161324.
Mok P K T et al, “A Novel High-Voltage High-Speed MESFET Using a Standard GAAS Digital IC Process” IEEE Transactions on Electron Devices, IEEE Inc. New York, US. vol. 41, No. 2, Feb. 1, 1994, pp. 246-250, XP000478051.
Karmalkar S. et al. “Very High Voltage AlGaN/GaN High Electron Mobility Transistors Using a Field Plate Deposited on a Stepped Insulator” Solid State Electronics, Elsevier Science Publishers, Barking, GB, vol. 45, No. 9, Sep. 2001, pp. 1645-1652, XP004317729.
Li J, et al “High Breakdown Voltage GaN HFET With Field Palte” Electronics Letters, IEE Stevenage, GB vol. 37, No. 3, Feb. 1, 2001, pp. 196-197, XP006016221.
Xing H. et al. “High Breakdown Voltage ALGAN-GAN HEMTS Achieved by Multiple Field Plates” IEEE Electron Device Letters, IEEE Inc. New York, US. vol. 25, No. 4, Apr. 2004, pp. 161-163, XP001190361.
Saito et al., Solid-State Electronics, Theoretical Limit Estimation of Lateral Wide Bandgap Semiconductor Power-Switching Device, Apr. 1. 2003, pp. 1555-1562.
Japanese Journal of Applied Physics, vol. 43, No. 4B, 2004, pp. 2239-2242, XP-001227744, Design and Demonstration of High Breakdown Voltage GAN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Ap

Affiliated with

Also associated with

Rating

Wide bandgap HEMTs with source connected field plates does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wide bandgap HEMTs with source connected field plates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wide bandgap HEMTs with source connected field plates will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4074724