Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-03-29
2011-03-29
Ho, Hoang-Quan T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S488000, C257SE29246, C257SE21403, C257SE21407, C257SE29009, C257SE29017, C438S140000, C438S172000, C438S454000
Reexamination Certificate
active
07915644
ABSTRACT:
A HEMT comprising an active region comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the active region. A spacer layer is formed on at least a portion of a surface of said active region and covering the gate. A field plate is formed on the spacer layer and electrically connected to the source electrode, wherein the field plate reduces the peak operating electric field in the HEMT.
REFERENCES:
patent: 4551905 (1985-11-01), Chao et al.
patent: 4947232 (1990-08-01), Ashida et al.
patent: 5192987 (1993-03-01), Khan et al.
patent: 5196359 (1993-03-01), Shih et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5296395 (1994-03-01), Khan et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5399886 (1995-03-01), Hasegawa
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5569937 (1996-10-01), Bhatnagar
patent: 5652179 (1997-07-01), Strifler et al.
patent: 5686738 (1997-11-01), Moustakas
patent: 5739554 (1998-04-01), Edmond et al.
patent: 5929467 (1999-07-01), Kawai et al.
patent: 6033948 (2000-03-01), Kwon et al.
patent: 6057564 (2000-05-01), Rennie
patent: 6100571 (2000-08-01), Mizuta et al.
patent: 6127703 (2000-10-01), Letavic et al.
patent: 6140169 (2000-10-01), Kawai et al.
patent: 6307232 (2001-10-01), Akiyama et al.
patent: 6316793 (2001-11-01), Sheppard et al.
patent: 6346451 (2002-02-01), Simpson et al.
patent: 6445038 (2002-09-01), Tihanyi
patent: 6468878 (2002-10-01), Petruzzello et al.
patent: 6475857 (2002-11-01), Kim
patent: 6483135 (2002-11-01), Mizuta et al.
patent: 6495409 (2002-12-01), Manfra et al.
patent: 6559513 (2003-05-01), Miller et al.
patent: 6584333 (2003-06-01), Gauss et al.
patent: 6586781 (2003-07-01), Wu et al.
patent: 6586813 (2003-07-01), Nagahara
patent: 6624488 (2003-09-01), Kim
patent: 6686616 (2004-02-01), Allen et al.
patent: 6690042 (2004-02-01), Khan et al.
patent: 6933544 (2005-08-01), Saito
patent: 6940090 (2005-09-01), Saito et al.
patent: 2001/0015446 (2001-08-01), Inoue et al.
patent: 2001/0023964 (2001-09-01), Wu et al.
patent: 2002/0005528 (2002-01-01), Nagahara
patent: 2002/0017648 (2002-02-01), Kasahara et al.
patent: 2002/0137318 (2002-09-01), Peake et al.
patent: 2002/0155646 (2002-10-01), Petruzzello et al.
patent: 2002/0167023 (2002-11-01), Chavarkar et al.
patent: 2003/0006437 (2003-01-01), Mizuta et al.
patent: 2003/0020092 (2003-01-01), Parikh et al.
patent: 2003/0107081 (2003-06-01), Lee et al.
patent: 2003/0132463 (2003-07-01), Miyoshi
patent: 2003/0183844 (2003-10-01), Yokoyama et al.
patent: 2003/0222327 (2003-12-01), Yamaguchi et al.
patent: 2004/0188775 (2004-09-01), Peake et al.
patent: 2005/0051796 (2005-03-01), Parikh et al.
patent: 2005/0062069 (2005-03-01), Saito et al.
patent: 2005/0082611 (2005-04-01), Peake et al.
patent: 2005/0110042 (2005-05-01), Saito et al.
patent: 2005/0189559 (2005-09-01), Saito et al.
patent: 2006/0071247 (2006-04-01), Chen et al.
patent: 1428870 (2003-07-01), None
patent: 1639875 (2005-07-01), None
patent: 0069429 (1983-01-01), None
patent: 0792028 (1997-08-01), None
patent: 1336989 (2003-08-01), None
patent: 05021793 (1993-01-01), None
patent: 07176544 (1995-07-01), None
patent: WO9908323 (1999-02-01), None
patent: WO03038905 (2003-05-01), None
patent: WO2004068590 (2004-08-01), None
patent: WO2005114743 (2005-12-01), None
patent: WO2006025971 (2006-03-01), None
First Examination Report from related European Application No. 04 788 642.9-2203, Dated: Dec. 22, 2009.
Second Office Action From Related Chinese Application No. 200480032782.1, Dated: Dec. 28, 2009.
Office Action from related U.S. Appl. No. 11/078,265, Dated: Jan. 20, 2010.
Office Action from related U.S. Appl. No. 11/807,701, Dated: Jan. 26, 2010.
Office Action from related U.S. Appl. No. 10/958,945, Dated: Jan. 28, 2010.
Second Office Action from related Chinese Application No. 200580014866.7, Dated: Nov. 25, 2009.
From related application: Chinese Patent Application No. 200580014868.6, Second Office Action dated Feb. 24, 2010.
Office Action from related U.S. Appl. No. 10/958,970, dated: Nov. 10, 2005.
Response to related Office Action U.S. Appl. No. 10/958,970, dated: Apr. 10, 2006.
Office Action from related U.S. Appl. No. 10/958,970, dated: Jun. 29, 2006.
Response to related Office Action U.S. Appl. No. 10/958,970, dated: Dec. 29, 2006.
Office Action from related U.S. Appl. No. 10/958,970, dated: Mar. 29, 2007.
Response to related Office Action U.S. Appl. No. 10/958,970, dated: Oct. 1, 2007.
Office Action from related U.S. Appl. No. 10/958,970, dated: Jan. 8, 2008.
Response to related Office Action U.S. Appl. No. 10/958,970, dated: Jun. 8, 2008.
Office Action from related U.S. Appl. No. 10/958,970, dated: Sep. 10, 2008.
Response to related Office Action U.S. Appl. No. 10/958,970, dated: Dec. 5, 2008.
Notice of Allowance from related U.S. Appl. No. 10/958,970, dated: Feb. 10, 2009.
Examiner's First Report on Patent Application re related Australian Application No. 2005246697 dated Mar. 19, 2010.
International Preliminary Examination Report re related PCT Application, PCT/US05/13725 mailed May 25, 2007.
Saito et al. “Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications”, Japanese Journal of Applied Physics, Japan Society of Applied Physics, Tokyo, JP vol. 43, No. 4B, Apr. 2004 pp. 2239-2242, XP001227744, ISSN: 0021-4922.
Saito et al. Solid State Electronics, Theoretical Limit Estimation of Lateral Wide Bandgap Semiconductor Power-Switching Device Apr. 1, 2003, p. 1555-1562.
Saito et al. “High Breakdown Voltage A1GaN-GaN Power HEMT Design and High Current Density Switching Behavior”, IEEE Transactions on Electron Devices, vol. 50, No. 12, Dec. 2003, pp. 2528-2531.
Heikman et al. “Growth of FE Doped Semi-Insulating GaN by Metalorganic Chemical Vapor Deposition” Applied Physics Letters, vol. 81, No. 3, Jul. 2002, pp. 439-441.
Heikman, Growth and Characteristics of FE-Doped GaN, Journal of Crystal Growth 248 (2003), 513-517.
IEEE Electron Device Letters, vol. 18, No. 10, (Oct. 1997), p. 492.
Wu et al. “High A1 Content AlGaN/GaN HEMTS With Very High Performance”, IEDM 1999 Digest pp. 925-927, Washington, D.C. Dec. 1999.
IEEE Transactions on Electron Devices, vol. 48, No. 3 Mar. 2001, p. 581-585.
Kahn et al., “AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors on SIC Substrates”, Applied Physics Letters, American Institute of Physics. New York, US, vol. 77, No. 9, Aug. 2000, p. 1339-1341, XP000951319 ISSN: 0003-6951.
Lu et al. “P-Type SiGe Transistors With Low Gate Leakage Using Sin Gate Dielectric”, IEEE Electron Device Letters, IEEE, Inc., New York, US, vol. 20, No. 10, Oct. 1999, p. 514-516, XP000890470, ISSN: 0741-3106.
Zhang N-Q et al., “High Breakdown GaN HEMT With Overlapping Gate Structure”, IEEE Electron Device Letters, IEEE, Inc. New York, US, vol. 9, Sep. 2000, p. 373-375, XP000954354, ISSN: 0741-3106.
Tillak, et al., “Effect of Passivation on AlGaN/GaN HEMT Device Performance” 2000 IEEE International Symposium on Compound Semiconductor. Proceedings of the IEEE 27thInternational Symposium on Compound Semiconductors (CAT. No. 00th8498), 2000 IEEE International Symposium on Compound Semicocnductors Proceedings of the, p. 357-363, XP002239700, 2000 Piscataway, NY, USA, IEEE, US ISBN: 0-7803-6258-6.
S. Karmalkar, U.K. Mishra, “Very High Voltage AlGaN/GaN High Electron Mobility Transistors Using a Field Plate Deposited on a Stepped Insulator.”Solid-State Electronicsvol. 45, (2001) pp. 1645-1652.
W. Saito et al., “600V AlGaN/GaN Power-HEMT: Design, Fabrication and Demonstration on High Voltage DC-DC Converter.”IEEE IEDMvol. 23, No. 7, (2003) pp. 587-590.
Wu et al., “High-Gain Microwave GaN HEMTS With Source-Terminated Field-Plates”, CREE Santa Barbara Technology Center.
Wu et al., “30-W/MM GaN HEMTS by Field Plate Optimization
Mishra Umesh
Moore Marcia
Parikh Primit
Wu Yifeng
Cree Inc.
Ho Hoang-Quan T
Koppel, Patrick, Heybl & Dawson
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