Wide band gap semiconductor templates

Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Superconductor next to layer containing nonsuperconducting...

Reexamination Certificate

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C505S237000, C252S500000, C252S519510, C252S520200, C252S521100, C428S701000, C428S702000

Reexamination Certificate

active

07851412

ABSTRACT:
The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

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Wang et al., Deposition of in=plane textured MgO on amorphous Si3N4 substrate by ion-beam-assisted deposition and comparisions with ion-beam-assisted deposition yttria-stabilized-zirconia Nov. 19, 1997, Applied Phys. Lett. 71 (20) 2955-2957.
Wang et al., App. Phys. Lett., vol. 71, No. 20, pp. 2955-2957 (1997).
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Wang et al., Applied Phys. Lett.,vol. 71, No. 20, pp. 2955-2957 (1997 Deposition of in-plane textured MgO on amorphous Si3N4 substrate by ion-beamed-assisted deposition and comparisons with ion-beam-assisted deposited yttria-stabilized-zirconia.

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