Wide band gap semiconductor photodetector based gamma ray...

Radiant energy – Geological testing or irradiation – Well testing apparatus and methods

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

08039792

ABSTRACT:
A gamma ray detector uses a scintillation detector having a response that matches a response characteristic of a photodiode. The detector may be used to measure natural gamma rays and/or gamma rays produced by interaction of neutrons from a neutron source with the earth formation.

REFERENCES:
patent: 3508439 (1970-04-01), Alger
patent: 3558888 (1971-01-01), Youmans
patent: 3976879 (1976-08-01), Turcotte
patent: 4468863 (1984-09-01), Van Steenwyk
patent: 4834493 (1989-05-01), Cahill et al.
patent: 5001342 (1991-03-01), Rambow
patent: 5218771 (1993-06-01), Redford
patent: 5659133 (1997-08-01), Sims et al.
patent: 5773829 (1998-06-01), Iwanczyk et al.
patent: 6347282 (2002-02-01), Estes et al.
patent: 6584837 (2003-07-01), Kurkoski
patent: 6601450 (2003-08-01), Burlingame
patent: 6755246 (2004-06-01), Chen et al.
patent: 6766855 (2004-07-01), Snoga
patent: 6768326 (2004-07-01), Brown et al.
patent: 6838741 (2005-01-01), Sandvik et al.
patent: 7002156 (2006-02-01), Sandvik et al.
patent: 7034307 (2006-04-01), Sane et al.
patent: 7313221 (2007-12-01), Sowerby et al.
patent: 7675029 (2010-03-01), Ramstad et al.
patent: 2002/0036260 (2002-03-01), Adolph
patent: 2002/0190207 (2002-12-01), Levy et al.
patent: 2003/0052701 (2003-03-01), Brown et al.
patent: 2003/0080294 (2003-05-01), Matocha et al.
patent: 2003/0081218 (2003-05-01), Orban
patent: 2004/0079526 (2004-04-01), Cairns et al.
patent: 2004/0108530 (2004-06-01), Sandvik et al.
patent: 2004/0257911 (2004-12-01), Tang et al.
patent: 2006/0146335 (2006-07-01), Mitchell et al.
patent: 2007/0034793 (2007-02-01), Estes et al.
patent: 11023722 (1999-01-01), None
patent: 1045195 (1983-09-01), None
P. P. Chow et al.; “AIGaN Schottky diodes for short wavelength uv applications,” Paper 3948-32 for presentation at SPIE Optoelectronics 2000, pp. 1-20 (10 sheets).
H. T. Califano; “Minitact Gyroscope—The Low Cost Alternative,” (date unknown), pp. 1-7.
Measurement of Radiation, Sodium Iodine Detector, p. 11, http://www.physics.isu.edu/radinf
aidetector.htm, Aug. 9, 2005, 1 page.
J. E. Meisner et al.; “Csl(T1) with Photodiodes for Identifying Subsurface Radionuclide Contamination,” IEEE, 1995, pp. 431-434.
E&P Projects, Harsh-Environment Solid-State Gamma Detector for Down-hole Gas and Oil Exploration. http://www.netl.doe.gov/, Oct. 15, 2005, 2 pages.
R. Hulsing; “MEMS Inertial Rate and Acceleration Sensor,” IEEE, 1996, pp. 169-176.
O. Degani et al.; “Optimal Design and Noise Consideration of Micromachined Vibrating Rate Gyroscope with Modulated Integrative Differential Optical Sensing,” Journal of Microelectromechanical Systems, vol. 7, No. 4, Sep. 1998, pp. 329-338.
P. Adamiec et al.; “Pressure-tuned InGaAsSb/AIGaAsSb diode laser with 700 nm tuning range,” Applied Physics Letters, vol. 85, No. 19, Nov. 8, 2004, pp. 4292-4294.
W. Trzeciakowski et al.; “Pressure and temperature tuning of laser diodes,” Phys. stat. sol. (b) 244, No. 1, (2007), pp. 179-186.
A. L. Beck et al.; “Quasi-Direct UV/Blue GaP Avalanche Photodetectors,” IEEE Journal of Quantum Electronics, vol. 40, No. 12, Dec. 2004, pp. 1695-1699.
J. D. Dupuis et al.; “Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes,” Journal of Crystal Growth, 2008, pp. 1-6.
A. Tomoki et al.; “High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe N+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates,” Japanese Journal of Applied Physics, vol. 44, No. 17, 2005, pp. L508-L510.
Han-Din Liu et al.; “Demonstration of Ultraviolet 6H-SiC PIN Avalanche Photodiodes,” IEEE Photonics Technology Letters, vol. 18, No. 23, Dec. 1, 2006, pp. 2508-2510.
Ho-Young Cha et al.; “Temperature Dependent Characteristics of Nonreach—Through 4H-SiC Separate Absorption and Multiplication APDs for UV Detection,” IEEE Sensors Journal, vol. 8, No. 3, Mar. 2008, pp. 233-237.
E.V.D. Van Loef et al.; “Scintillation properties of LaBr3:Ce3+ crystals: fast, efficient and high-energy-resolution scintillators,” Nuclear Instruments and Methods in Physics Research A 486 (2002), pp. 254-258.
Boston Electronics Corporation, Selection Table, SiC UV Photodiodes with Hybrid Preamps, S:\Product Literature\UV\SiC hybrids selection table 7-15-02.doc.
Boston Electronics Corporation, Q:\Product Literature\UV\UV brochure back cover spectral response.doc, Jun. 26, 2002.
Boston Electronics Corporation, Flame Sensors, May 14, 2001, 3 pages.
Boston Electronics Corporation, Aging properties of Silicon Carbide and various other solid state UV photodetectors under 254 nm Hg lamp irradiation, Feb. 20, 2001, 5 pages.
Boston Electronics Corporation, Ultraviolet Photodetectors, Silicon Carbide (SiC), Gallium Nitride & Aluminum Gallium Nitride (GaN & A1GaN) Titanium Dioxide (TiO2), for more information please consult: IEEE Transactions on Electroni Devices, vol. 40, No. 2, Feb. 1993, 20 pages.
Lightpath Technologies, Gradium Lenses, Focusing on optical solutions, pp. 22-27.
RABUS; “ultra-performance in the ultraviolet,” spies oemagazine, Sep. 2003, pp. 21-24.
Hamamatsu, UV TRON Driving Circuit C3704 Series, “Compact, Lightweight, Low Current Consumption, Low Cost Operates as High Sensitivity UV Sensor with UV TRON Suitable for Flame Detectors and Fire Alarms,” Jul. 1997, pp. 1-2.
Hamamatsu, Flame Sensor, UV TRON R2868, “Quick Detection of Flame from Distance, Compact UV Sensor with High Sensitivity and Wide Directivity, Suitable for Flame Detectors and Fire Alarms,” Mar. 1998, pp. 1-2.
Brilliance 380 Scintillation Material, Product Brochure, Saint-Gobain Crystals, 2 pp. (Jul. 2008).
Downloaded from: //www.bing.com/images/search?q=Electromagnetic+Spectrum+Chart&qpvt=Electromagnetic+Spectrum+Chart&FORM=IGRE (Feb. 9, 2011).
Califano, H.T., “Minitact Gyroscope—The Low Cost Alternative,” Position Location and Navigation Symposium, IEEE (Apr. 1994).
Condor Pacific Industries, Inc., “Minitact Two Axis Rate Gyro,” pp. 1-3, appendix in “An Ultra Low Weight/Low Cost Three Axis Attitude Readout System for Nano-Satellites,” Aerospace Conference IEEE Proceedings (Mar. 2001).
“Ultra Violet Photodetectors” by the distributor Boston Electric is available at: http://www.boselec.com/documents/UVPhotodetectorsWWW8-6-04.pdf (67 pp.) (Nov. 1, 2002).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Wide band gap semiconductor photodetector based gamma ray... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Wide band gap semiconductor photodetector based gamma ray..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Wide band gap semiconductor photodetector based gamma ray... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4286573

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.