Wide band gap semiconductor light emitting devices

Details Wide band gap semiconductor light emitting devices Wide band gap semiconductor light emitting devices

1988-09-15

1990-01-16

Gonzalez, Frank

Coherent light generators

Particular active media

Semiconductor

372 50, H01S 319

Patent

active

048948322

ABSTRACT:
Wide band gap, single conductivity type semiconductor light emitting diodes (LED's) feature a bias potential across the device below that required for carrier multiplication by avalanche breakdown, together with separate means for carrier introduction, such as an electron beam of a pn junction diode, to achieve light emission. The addition of Fabry-Perot surfaces converts the LED to a semiconductor laser. Efficiency enhancing heterostructure, including potential wells and staircases, may be added to the device. Arrays of such devices on a substrate may be scanned by an electron beam to display video information.

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Basov et al; "Semiconductor Streamer Lasers"; IEEE J. of Quan. Elec., vol. QE-13, No. 8; 08/1977; pp. 699-704.

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