Wide-band-gap, alkaline-earth-oxide semiconductor and devices ut

Compositions – Radioactive compositions – Nuclear reactor fuel

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357 61, 357 63, 252 623ZT, 307200R, H01L 29227

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active

042649145

ABSTRACT:
This invention relates to novel and comparatively inexpensive semiconductor devices utilizing semiconducting alkaline-earth-oxide crystals doped with alkali metal. The semiconducting crystals are produced by a simple and relatively inexpensive process. As a specific example, a high-purity lithium-doped MgO crystal is grown by conventional techniques. The crystal then is heated in an oxygen-containing atmosphere to form many [Li].degree. defects therein, and the resulting defect-rich hot crystal is promptly quenched to render the defects stable at room temperature and temperatures well above the same. Quenching can be effected conveniently by contacting the hot crystal with room-temperature air.

REFERENCES:
patent: 3121035 (1964-02-01), Heinze
patent: 3142594 (1964-07-01), Bahe
patent: 3429831 (1969-02-01), Garfinkel et al.
patent: 3549561 (1970-12-01), Westerveld et al.
patent: 3630743 (1971-12-01), Harvill
Abraham et al., Journal of Chemical Physics, vol. 55, No. 8, Oct. 15, 1971, pp. 3752-3756.
Yau et al., Solid State Electronics, vol. 17, (1974), pp. 193-201.
Abraham et al., Physical Review Letters, vol. 37, No. 13, Sep. 27, 1976, pp. 849-852.
Chen et al., Physical Review B, vol. 16, No. 12, Dec. 15, 1977, pp. 5535-5542.

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