Wide band cross point switch using MEMS technology

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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Details

C257S736000, C257S750000, C438S050000, C438S750000, C365S200000

Reexamination Certificate

active

06849924

ABSTRACT:
A multilayer switching assembly for switching high frequency signals has MEMS structures on a ceramic substrate having a top surface, a bottom surface and a plurality of insulating layers. The insulating layers are separated by a first conductor and a second conductor. The first conductor is connected to a ground potential. The second conductor is separated from the first conductor by one of the insulating layers. The second conductor presents a specific impedance (50 ohms) with respect to the first conductor to high frequency signals traveling on the second conductor.64 MEMS structures are mounted on the top surface. Each MEMS has an input, an output, and a control. The input connected to the second conductor. The output is connected to a coplanar waveguide placed on the top surface. The control is connected to the bottom surface.The input to each MEMS is electrically shielded from the output and from the control by a third conductor connected to the first (grounded) conductor. The third conductor traverses one or more of the insulating layers thereby acting as a shield and precluding the high frequency signals presented to the input from propagating to the output and to the control. The 64 MEMS are arranged in a square 8 by 8 matrix, as well as their controls. High frequency inputs and outputs to be switched by the MEMS are placed on the periphery of the substrate to further enhance the separation of signals. Terminating resistors (50 ohms) are also placed near the periphery.

REFERENCES:
patent: 6046659 (2000-04-01), Loo et al.
patent: 6607934 (2003-08-01), Chang et al.

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