Wide-band amplifier useful for squarewave signals

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307570, 307443, 307263, H03K 1900

Patent

active

050436015

ABSTRACT:
An amplifier arrangement comprising a first (T1) and a second (T2) field-effect transistor of the same conductivity type and a driver circuit (Q1, Q2, Q3, T3, T4, T5, I) which is responsive to a signal to be amplified at the input terminals (3, 4) to drive the respective drain electrodes of the two field-effect transistors (T1, T2). A resistive element (R) is formed between the drain and the gate electrode of the first field-effect transistor (T1) and a capacitive element (C) is formed between the gate and the source electrode. Together with said elements (R, C) the first field-effect transistor (T1) constitutes a reactance circuit having an inductive character, which is arranged in parallel with the parasitic gate-source capacitance of the second field-effect transistor (T2). This results in an improved step-function response and edge steepness of step-function signals on the output terminal (5), i.e., at the drain electrode of the second field-effect transistor (T2), in comparison with an amplifier arrangement without said reactance circuit. The circuit is very suitable for integration in BICMOS technology.

REFERENCES:
patent: 4578597 (1986-03-01), Soneda et al.
patent: 4614884 (1986-09-01), Nagano
patent: 4777388 (1988-10-01), Widener
patent: 4779014 (1988-10-01), Masuoka et al.
patent: 4810902 (1989-03-01), Storti et al.

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