Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1988-11-17
1990-02-27
Howell, Janice A.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504923, 250423R, H01J 3730
Patent
active
049048660
ABSTRACT:
A process for large area hardening of photoresists or polymer films placed on substrates is disclosed. The process requires the use of a short duration (<1 us.) pulsed electron beam produced in soft vacuum by an abnormal glow discharge. The pulsed electron beam interacts with the patterned photoresist/polymer resist so as to harden or stabilize the patterns thereon by electron induced cross-linking. The use of a soft vacuum environment allows for both thermal as well as chemically induced hardening.
REFERENCES:
patent: 4187331 (1980-02-01), Hsioh-Lien Ma
patent: 4496449 (1985-01-01), Rocca et al.
patent: 4527044 (1985-07-01), Bruel et al.
patent: 4737688 (1988-04-01), Collins et al.
patent: 4827137 (1989-05-01), Collins et al.
patent: 4849628 (1989-07-01), McLuckey et al.
Collins George J.
Krishnaswamy Jayaram
Applied Electron Corporation
Hein William E.
Howell Janice A.
Nguyen Kiet T.
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