Whole-wafer photoemission analysis

Details Whole-wafer photoemission analysis Whole-wafer photoemission analysis

2007-07-17

2007-07-17

Miriam, Daniel (Department: 2624)

Image analysis

Applications

Manufacturing or product inspection

Reexamination Certificate

active

10644116

ABSTRACT:
A method and system for collecting and analyzing photoemission data wherein illumination and photoemission images are acquired for a plurality of die, such as for each die on a wafer. Then, the images are overlaid, aligned, and assembled in a mosaic, thereby allowing analysis of the photoemission occurring across a plurality of die, such as across the entire wafer. Preferably, gathering this data allows statistical analysis of the photoemission such as analysis of commonly emitting locations to identify structures/cells that are sensitive to the manufacturing process.

REFERENCES:
patent: 4680635 (1987-07-01), Khurana
patent: 4755874 (1988-07-01), Esrig et al.
patent: 5970167 (1999-10-01), Colvin
patent: 6716683 (2004-04-01), Bruce et al.
Trigg “The infrared photoemission microscope as a tool for semiconductor device failure analysis”, IEEE, pp. 21-26, 1997.
Khiam, et al “A new fluorescent and photoemission microscope for submicron VLSI IC failure analysis”, IEEE, pp. 27-32.

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