Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate
2007-05-29
2007-05-29
Andujap, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
C257S089000, C257S098000, C257S101000, C257S102000, C257S103000, C257SE25032
Reexamination Certificate
active
10938704
ABSTRACT:
A white, single or multi-color light emitting diode (LED) includes a mirror for reflecting photons within the LED; a first active region, adjacent the mirror, including one or more current-injected layers for emitting photons when electrically biased in a forward direction; a second active region, adjacent the first active region, including one or more optically-pumped layers for emitting photons, wherein the optically-pumped layers are optically excited by the photons emitted by the current-injected layers, thereby recycling guided modes; and an output interface, adjacent the second active region, for allowing the photons emitted by the optically-pumped layers to escape the LED as emitted light.
REFERENCES:
patent: 3739217 (1973-06-01), Bergh et al.
patent: 5226053 (1993-07-01), Cho et al.
patent: 5362977 (1994-11-01), Hunt et al.
patent: 5779924 (1998-07-01), Krames et al.
patent: 5995529 (1999-11-01), Kurtz et al.
patent: 6163038 (2000-12-01), Chen et al.
patent: 6303404 (2001-10-01), Moon et al.
patent: 6504180 (2003-01-01), Heremans et al.
patent: 6525464 (2003-02-01), Chin
patent: 6538371 (2003-03-01), Duggal et al.
patent: 6608330 (2003-08-01), Yamada
patent: 6620238 (2003-09-01), Tsuda et al.
patent: 6620643 (2003-09-01), Koike
patent: 6630691 (2003-10-01), Mueller-Mach et al.
patent: 2003/0057444 (2003-03-01), Niki et al.
patent: 2003/0178626 (2003-09-01), Sugiyama et al.
patent: WO 2005/064666 (2005-07-01), None
Y. Kawakami et al., “Dimensionality of Excitons in InGaN-Based Light Emitting Devices”, Phys. Stat. Sol. (a) 178, 331 (2000).
Y Ohba et al., “A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition”, Journal of Crystal Growth 145 pp. 214-218 (1994).
Chen-Fu Chu et al., “Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Life-Off”, Jpn. J. Appl. Phys. vol. 42 (Feb. 15, 2003).
P.R. Tavemier et al., “Mechanics of laser-assisted debonding of films”, Journal of Applied Physics, vol. 89 No. 3 (Feb. 1, 2001).
W.S. Wong et al., “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off”, Applied Physics Letters, vol. 75 No. 10 (Sep. 6, 1999).
X.A. Cao et al., “Electrical effects of plasma damage in p-GaN”, Applied Physics Letters, vol. 75 No. 17 (Oct. 25, 1999).
Toshio Nishida et al., “Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN”, Applied Physics Letters, vol. 79 No. 6 (Aug. 6, 2001).
A. Billeb et al., “Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures”, Appl. Phys. Lett. 70 (21) (May 26, 1997).
W.S. Wong et al., “InxGa1-xN light emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off”, Appl. Phys. Lett. vol. 77 No. 18 (Oct. 30, 2000).
J.J. Wierer et al., “High-power AlGaInN flip-chip light-emitting diodes”, Applied Physics Letters, vol. 78 No. 22 (May 28, 2001).
M.S. Minsky et al., “Room-temperature photoenhanced wet etching of GaN”, Appl. Phys. Lett 68 (11) (Mar. 11, 1996).
C. Youtsey et al., “Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations”, Applied Physics Letters, vol. 73 No. 6 (Aug. 10, 1998).
H. Benisty et al., “Impact of planar micro-cavity effects on light extraction—basic concepts and analytical trends,” 1998, IEEE J. Quantum Electron, 34:1612.
M. Boroditsky et al., “Light extraction efficiency from light-emitting diodes,” 1997, Proceedings of the SPIE—The International Society for Optical Engineering, SPIE-Int. Soc. Opt. Eng., 3002:119-122.
D. Delbeke et al., “High-efficiency Semiconductor Resonant-Cavity Light-Emitting diodes: A review,” 2002, IEEE J. on selected topic in Quantum Electron, 8(2):189.
X. Guo et al., “Phonton Recycling Semiconductor Light Emitting diode,” 1999, IEDM Technical Digest, IEDM-99, p. 600.
I. Schnitzer et al., “30% Enternal Quantum Efficiency From Surface Textured, Thin Film Light Emitting Diode,” 1993, Applied Physics Letters, 63:2174-2176.
Benisty Henri
DenBaars Steven P.
Nakamura Shuji
Schwach Carole
Weisbuch Claude Charles Aime
Andujap Leonardo
Gates & Cooper LLP
The Regents of the University of California
Wilson Scott R.
LandOfFree
White, single or multi-color light emitting diodes by... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with White, single or multi-color light emitting diodes by..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and White, single or multi-color light emitting diodes by... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3733149