Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1998-05-14
2000-12-19
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257101, H01L 3300
Patent
active
061630381
ABSTRACT:
A white light-emitting diode and a method of fabricating the same diode are disclosed. The white light-emitting diode is fabricated by epitaxy, which can produce two peaks in the spectrum at the P-N junction by appropriately adjusting epitaxial parameters such as temperature, pressure, NH.sub.3 flux and the ratio of H.sub.2 to N.sub.2 or the concentration of dopant, such as Mg or Si. The diode can thus radiate white light by adjusting the wavelength and the intensity of the principal peak in the two peaks. Further, quantum well structure can be formed in the diode. By appropriately adjusting the epitaxial parameters, the spectrum of the quantum well structures may have more than one peak. Therefore, white light can be generated by combining the light with wavelengths at two or three different peaks. The white LED can radiate white light itself and need not involve combining many LEDs, so that the cost and the difficulty of fabricating the white LED lamp can be reduced. Moreover, the white LED can radiate white light itself, and does not need to excite fluorescent material to radiate white light. Accordingly, the lifetime of the white LED lamp is not limited by the relatively short lifetime of fluorescent material.
REFERENCES:
patent: 5237182 (1993-08-01), Kitagawa et al.
patent: 5955835 (1999-05-01), Oh et al.
patent: 5998803 (1999-12-01), Forrest et al.
patent: 5998925 (1999-12-01), Shimizu et al.
Chen Chin-Yuan
Hong Ming-Huang
Huang Chao-Nien
Hwang Fei-Chang
Lean Eric G.
Industrial Technology Research Institute
Meier Stephen D.
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